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| Datasheet File OCR Text: |
| geometry principal device type cmatvs3v3 gross die per 5 inch wafer 163,034 process CPZ35R transient voltage suppressor 3.3 volt tvs chip process details die size 10.2 x 10.2 mils die thickness 3.9 mils cathode bonding pad area 7.1 mils diameter top side metalization al - 30,000? back side metalization au - 12,000? www.centralsemi.com r0 (5-january 2012)
process CPZ35R typical electrical characteristics www.centralsemi.com r0 (5-january 2012) |
Price & Availability of CPZ35R
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